The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Oct. 16, 2009
Hironao Shinohara, Ichihara, JP;
Hiromitsu Sakai, Chiba, JP;
Hironao Shinohara, Ichihara, JP;
Hiromitsu Sakai, Chiba, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
The semiconductor light-emitting device () of the present invention includes a substrate (); a laminate semiconductor layer () comprised of an n-type semiconductor layer () formed on the substrate (), a light-emitting layer () laminated on the n-type semiconductor layer () and a p-type semiconductor layer () laminated on the light-emitting layer (); a concavo-convex part () for improving a light extraction efficiency, which is formed on all or a part of a top surface () of the laminate semiconductor layer (); a high-concentration p-type semiconductor layer () having a higher dopant concentration than that of the p-type semiconductor layer (), which is laminated on a convex part () that constitutes the concavo-convex part () of the laminate semiconductor layer (); and a translucent current diffusion layer () laminated on at least the high-concentration p-type semiconductor layer ().