The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Dec. 19, 2007
Hironao Shinohara, Ichihara, JP;
Hiromitsu Sakai, Chiba, JP;
Hironao Shinohara, Ichihara, JP;
Hiromitsu Sakai, Chiba, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer () is formed on a substrate (), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (), a plurality of convex parts () of surfaces () not parallel to the C-plane, to thereby form, on the substrate, an upper surface () that is composed of the convex parts () and a flat surface () of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer () on the upper surface (), to thereby embed the convex parts () in the group III nitride semiconductor layer ().