The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Oct. 24, 2013
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
TOYODA GOSEI CO., LTD., Aichi, JP;
Abstract
A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion () that includes an n-side power supply electrode (), an n-side auxiliary electrode () and n-side connective electrodes (). The n-side power supply electrode () and auxiliary electrode () are provided in the inner side beyond the p-type semiconductor layer () viewed from the light emitting layer (). On the p-type semiconductor layer (), a power supply insulating layer () transparent to light from the light emitting layer () is provided, and portions at lower side of the n-side power supply electrode () and auxiliary electrode () are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.