Kanagawa-ken, Japan

Hidetoshi Fujimoto

USPTO Granted Patents = 53 

Average Co-Inventor Count = 3.8

ph-index = 20

Forward Citations = 1,127(Granted Patents)

Forward Citations (Not Self Cited) = 1,117(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kawasaki, JP (1994 - 2015)
  • Kanagawa-ken, JP (2001 - 2015)
  • Kanagawa, JP (2007 - 2016)
  • Kawasaki Kanagawa, JP (2016)

Company Filing History:


Years Active: 1994-2016

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Areas of Expertise:
Semiconductor Device
Nitride Semiconductor
HEMT Semiconductor Device
Bipolar Transistor
Light-Emitting Element
Gallium Nitride Laser
Optoelectric Device
Compound Semiconductor
Semiconductor Light-Emitting Diode
Schottky Barrier Diode
Heterojunction Field Effect Transistor
Non-Stoichiometric Semiconductor
53 patents (USPTO):Explore Patents

Title: The Legacy of Hidetoshi Fujimoto: A Visionary Inventor in Kanagawa-ken, Japan

Introduction: Hidetoshi Fujimoto, a renowned inventor based in Kanagawa-ken, JP, is celebrated for his remarkable contributions to the field of technology. With 53 patents to his name, Fujimoto's innovative spirit and dedication to pushing the boundaries of semiconductor devices have solidified his place as a trailblazer in the industry.

Latest Patents: Among his latest patents, Fujimoto has introduced state-of-the-art semiconductor devices that feature advanced GaN-based semiconductor layers, source and drain electrodes, and innovative third nitride semiconductor layers with distinct band gaps and dopant concentrations. These cutting-edge inventions highlight his expertise in developing next-generation technologies.

Career Highlights: Throughout his illustrious career, Fujimoto has been a key figure at Kabushiki Kaisha Toshiba, where he has spearheaded numerous groundbreaking projects in semiconductor technology. His relentless pursuit of excellence and unwavering commitment to innovation have earned him recognition as a thought leader in the field.

Collaborations: Fujimoto has collaborated closely with esteemed colleagues such as Yasunobu Saito and Akira Yoshioka, whose collective expertise has enhanced the impact of their research and development initiatives. Together, they have propelled the boundaries of technology and set new standards for semiconductor innovation.

Conclusion: In conclusion, Hidetoshi Fujimoto stands as a visionary inventor whose innovative creations have left a lasting impact on the world of technology. His relentless pursuit of excellence and passion for innovation continue to inspire future generations of inventors and innovators. Fujimoto's groundbreaking work serves as a testament to his ingenuity and unwavering dedication to shaping the future of semiconductor technology.

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