The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Aug. 20, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Yasunobu Saito, Tokyo, JP;

Hidetoshi Fujimoto, Kanagawa-ken, JP;

Tetsuya Ohno, Kanagawa-ken, JP;

Akira Yoshioka, Kanagawa-ken, JP;

Wataru Saito, Kanagawa-ken, JP;

Toshiyuki Naka, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 23/482 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/4175 (2013.01); H01L 29/0657 (2013.01); H01L 2224/16225 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes AlGaN (0≦X≦1). The second semiconductor region is provided on a side opposite to the substrate of the first semiconductor region and includes AlGaN (0≦Y≦1, X≦Y). The first electrode is provided on a side opposite to the first semiconductor region of the second semiconductor region and ohmically connects to the second semiconductor region. The conducting section electrically connects between the first electrode and the conductive region.


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