Kabushiki Kaisha Toshiba

Hidetoshi Fujimoto

Yasunobu Saito

Akira Yoshioka

Wataru Saito

Tetsuya Ohno

Masahiro Yamamoto

Masayuki Ishikawa

Johji Nishio

Genichi Hatakoshi

Kazuhiko Itaya

Toshiyuki Naka

Takao Noda

John Rennie

Shinya Nunoue

Shinji Saito

Tomohiro Nitta

Yoshihiro Kokubun

Lisa Sugiura

Mariko Suzuki

Hideto Sugawara

Yorito Kakiuchi

Yukie Nishikawa

Masaaki Onomura

Naoko Yanase

Takeshi Uchihara

Tasuku Ono

Yasuo Ohba

Koichi Nitta

Takaaki Yasumoto

Ako Hatano

Shingo Masuko

Shin-Ya Nunoue

Mamoru Terauchi

Hiroaki Yoshida

Kazuhide Abe

Atsuko Iida

Toru Sugiyama

Haruhiko Okazaki

Hiroshi Mitsuhashi

Tetsuro Nozu

Takako Motai

Miki Yumoto

Masaru Furukawa

Yoshitomo Sagae

Atsushi Kamata

Tsutomu Uemoto

Norio Iizuka

Chiharu Nozaki

Yukako Murakami

Mikio Nakasuji

Katsunobu Sasanuma

Yasunari Yagi

Risa Sugiura

According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

Nitride semiconductor device and method for manufacturing same

A semiconductor device includes a first and second nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger the first nitride semiconductor layer. Source and drain electrodes are formed spaced from each other on the second nitride semiconductor layer. A third nitride semiconductor layer is formed on the second nitride semiconductor layer between the source and drain electrodes. A gate electrode is formed on the third nitride semiconductor layer. The third nitride semiconductor layer comprises at least two first layers and at least one a second layer which has a lower p-type dopant concentration than the first layer. The second layer also has a band gap larger than the first layer. The lowermost layer and the uppermost layer in the third nitride semiconductor layer stack are the first layers.

Semiconductor device

A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.

According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode.

A nitride semiconductor device includes a substrate, a first InGaAlN layer, a second InGaAlN layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second InGaAlN layer is provided on a surface of the first InGaAlN layer. The second InGaAlN layer has a wider band gap than the first InGaAlN layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second InGaAlN layer. The Schottky electrode is provided on the second InGaAlN layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second InGaAlN layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

Nitride semiconductor device

In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.

HEMT semiconductor device

In a semiconductor device, a first-layer includes a group-III nitride semiconductor of a first conduction type. A second-layer includes a group-III nitride semiconductor of a second conduction type on a first surface of the first layer. A third-layer includes an Al-containing group-III nitride semiconductor on a first region of a surface of the second layer. A gate electrode has one end above a surface of the third-layer and has the other end within the first-layer via the second-layer. The gate electrode is insulated from the first- to third-layers. A first electrode is connected to the third-layer. A second electrode is connected to a second region of the surface of the second-layer. A third electrode is provided above a second surface of the first layer. The second surface is opposite to the first surface of the first layer.

Semiconductor device and method of manufacturing semiconductor device

According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes AlGaN (0&#x2266;X&#x2266;1). The second semiconductor region is provided on a side opposite to the substrate of the first semiconductor region and includes AlGaN (0&#x2266;Y&#x2266;1, X&#x2266;Y). The first electrode is provided on a side opposite to the first semiconductor region of the second semiconductor region and ohmically connects to the second semiconductor region. The conducting section electrically connects between the first electrode and the conductive region.

A semiconductor device includes: a first semiconductor layer made of an AlGaN (0&#x2266;x&#x3c;1); a second semiconductor layer provided on the first semiconductor layer and made of an undoped or first conductivity type AlGaN (0&#x3c;y&#x2266;1, x&#x3c;y); an anode electrode and a cathode electrode which are connected to the second semiconductor layer; and a third semiconductor layer of second conductivity type provided between the anode electrode and the cathode electrode when viewed from a direction perpendicular to an upper surface of the second semiconductor layer. The third semiconductor layer is depleted when a predetermined magnitude or more of voltage is applied between the anode electrode and the cathode electrode.

According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

According to one embodiment, a semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, an insulating film, an ohmic electrode, and a Schottky electrode. A surface region of the third nitride semiconductor layer between the ohmic electrode and the Schottky electrode contains an element heterogeneous with the constituent element of the third nitride semiconductor layer at a higher concentration than a region of the third nitride semiconductor layer of the second nitride semiconductor layer side.

Semiconductor device and method for manufacturing same

According to one embodiment, a semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, and first and second element isolation insulating layers. The first element isolation insulating layer has a first end contacting with the drain electrode and the anode electrode, and a second end located in the first nitride semiconductor layer. The second element isolation insulating layer has a third end contacting with the cathode electrode, and a fourth end located in the first nitride semiconductor layer.

Semiconductor device including heterojunction field effect transistor and Schottky barrier diode

A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer.

Growing community of inventors

Kanagawa-ken, Japan

Hidetoshi Fujimoto