The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Mar. 07, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tetsuya Ohno, Nomi, JP;
Yasunobu Saito, Nomi, JP;
Hidetoshi Fujimoto, Kawasaki, JP;
Akira Yoshioka, Nomi, JP;
Takeshi Uchihara, Kawaguchi, JP;
Toshiyuki Naka, Nonoichi, JP;
Takaaki Yasumoto, Kawasaki, JP;
Naoko Yanase, Tokyo, JP;
Shingo Masuko, Kanazawa, JP;
Tasuku Ono, Nonoichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion.