Saitama, Japan

Takeshi Uchihara

USPTO Granted Patents = 7 

Average Co-Inventor Count = 6.1

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Saitama-ken, JP (2009 - 2013)
  • Saitama, JP (2005 - 2015)
  • Kawaguchi, JP (2015)
  • Kawaguchi Saitama, JP (2016)

Company Filing History:


Years Active: 2005-2016

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7 patents (USPTO):Explore Patents

Title: The Innovations of Takeshi Uchihara

Introduction

Takeshi Uchihara is a prominent inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Uchihara's latest patents include innovative designs for semiconductor devices. One notable patent describes a semiconductor device that features a GaN-based semiconductor layer, along with a source electrode, a drain electrode, and a gate electrode positioned between the source and drain electrodes. Another patent outlines a semiconductor device that incorporates a conductive substrate, a Schottky barrier diode, and a field-effect transistor, showcasing his expertise in integrating various components for enhanced performance.

Career Highlights

Takeshi Uchihara is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to explore and develop cutting-edge semiconductor technologies that have applications in various electronic devices.

Collaborations

Uchihara has collaborated with notable colleagues, including Naoko Yanase and Yasunobu Saito. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Takeshi Uchihara's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic devices, making a lasting impact on the industry.

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