The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Feb. 01, 2006
Takeshi Uchihara, Saitama-ken, JP;
Yasunori Usui, Kanagawa-ken, JP;
Akira Tanioka, Fukuoka-ken, JP;
Takuma Hara, Kanagawa-ken, JP;
Takeshi Uchihara, Saitama-ken, JP;
Yasunori Usui, Kanagawa-ken, JP;
Akira Tanioka, Fukuoka-ken, JP;
Takuma Hara, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Abstract
In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.