The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Aug. 29, 2014
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takaaki Yasumoto, Kawasaki Kanagawa, JP;
Naoko Yanase, Inagi Tokyo, JP;
Kazuhide Abe, Kawasaki Kanagawa, JP;
Takeshi Uchihara, Kawaguchi Saitama, JP;
Yasunobu Saito, Nomi Ishikawa, JP;
Toshiyuki Naka, Nonoichi Ishikawa, JP;
Akira Yoshioka, Nomi Ishikawa, JP;
Tasuku Ono, Nonoichi Ishikawa, JP;
Tetsuya Ohno, Nomi Ishikawa, JP;
Hidetoshi Fujimoto, Kawasaki Kanagawa, JP;
Shingo Masuko, Kanazawa Ishikawa, JP;
Masaru Furukawa, Himeji Hyogo, JP;
Yasunari Yagi, Ibo Hyogo, JP;
Miki Yumoto, Kawasaki Kanagawa, JP;
Atsuko Iida, Yokohama Kanagawa, JP;
Yukako Murakami, Chigasaki Kanagawa, JP;
Takako Motai, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.