Ibo Hyogo, Japan

Yasunari Yagi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 17.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Yasunari Yagi: Innovator in Semiconductor Technology

Introduction

Yasunari Yagi is a prominent inventor based in Ibo, Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and applications.

Latest Patents

Yagi holds a patent for a semiconductor device that features a GaN-based semiconductor layer. This device includes a source electrode, a drain electrode, and a gate electrode formed on the GaN-based semiconductor layer. Notably, a first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode. This invention showcases Yagi's expertise in advancing semiconductor technology.

Career Highlights

Yasunari Yagi is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to explore and develop cutting-edge semiconductor solutions that have the potential to impact various industries.

Collaborations

Yagi has collaborated with notable colleagues, including Takaaki Yasumoto and Naoko Yanase. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Yasunari Yagi's contributions to semiconductor technology exemplify his dedication to innovation. His patent and work at Toshiba highlight his role as a key player in advancing this critical field.

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