The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Aug. 29, 2014
Kabushiki Kaisha Toshiba, Tokyo, JP;
Hidetoshi Fujimoto, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first and second nitride semiconductor layer. The second nitride semiconductor layer has a band gap larger the first nitride semiconductor layer. Source and drain electrodes are formed spaced from each other on the second nitride semiconductor layer. A third nitride semiconductor layer is formed on the second nitride semiconductor layer between the source and drain electrodes. A gate electrode is formed on the third nitride semiconductor layer. The third nitride semiconductor layer comprises at least two first layers and at least one a second layer which has a lower p-type dopant concentration than the first layer. The second layer also has a band gap larger than the first layer. The lowermost layer and the uppermost layer in the third nitride semiconductor layer stack are the first layers.