The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Sep. 14, 2012
Akira Yoshioka, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Tetsuya Ohno, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Tetsuya Ohno, Kanagawa-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nitride semiconductor device includes a substrate, a first InGaAlN layer, a second InGaAlN layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second InGaAlN layer is provided on a surface of the first InGaAlN layer. The second InGaAlN layer has a wider band gap than the first InGaAlN layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second InGaAlN layer. The Schottky electrode is provided on the second InGaAlN layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second InGaAlN layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.