Tokyo, Japan

Hidenori Fujii

This inventor holds 31 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Devices. Top assignees: Mitsubishi Electric Corporation, Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp.. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidenori Fujii. Retrieved from https://idiyas.com/inventor/hidenori-fujii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 87.1

Average Co-Inventor Count = 1.2

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Hyogo, JP (2000 - 2004)
  • Chiyoda-ku, JP (2010 - 2014)
  • Tokyo, JP (2002 - 2023)

Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
Semiconductor Device
Power Conversion
Fabrication Method
IGBT Region
Temperature Sensing Diode
Vertical PNP Bipolar Transistor
Bipolar Device
Crystal Defect
31 patents (USPTO):Explore Patents

Title: **Hidenori Fujii: Innovator in Semiconductor Technology**

Introduction

Hidenori Fujii is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 27 patents, Fujii has established himself as a leading figure in the field, particularly in the development of advanced semiconductor devices.

Latest Patents

Fujii's latest patents showcase his innovative approach to semiconductor device design. One of his notable inventions includes an RC-IGBT (Insulated Gate Bipolar Transistor) that integrates an IGBT region and a diode region adjacent to each other. This device features a p-type anode layer on the first principal surface of an n-type drift layer, along with a p-type contact layer that is connected to an emitter electrode. The p-type contact layer incorporates aluminum as p-type impurities and is designed to be thinner than the n-type source layer in the IGBT region.

Another recent patent involves a unique semiconductor device where a transistor and a diode are integrated on a common semiconductor substrate. This design includes a transistor region divided into multiple channel and non-channel regions by gate electrodes, which enhances the overall functionality and efficiency of the device.

Career Highlights

Fujii has had a distinguished career with notable tenures at leading companies such as Mitsubishi Electric Corporation and Mitsubishi Denki Kabushiki Kaisha. His work has not only advanced the capabilities of semiconductor devices but has also set new standards in the industry.

Collaborations

Throughout his career, Fujii has collaborated with talented individuals in the field, including colleagues Tetsuo Takahashi and Shigeto Honda. These collaborations have played a pivotal role in driving innovation and fostering groundbreaking developments in semiconductor technology.

Conclusion

Hidenori Fujii continues to be a driving force in the advancement of semiconductor technology. His extensive patent portfolio and innovative contributions are a testament to his expertise and commitment to the field. As the industry evolves, Fujii's inventions will undoubtedly pave the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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