The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Jun. 14, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hidenori Fujii, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/868 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/7395 (2013.01); H01L 29/868 (2013.01);
Abstract
A semiconductor device includes: an n-type semiconductor substrate having a cell region and a termination region provided around the cell region; a p-type anode layer provided on an upper surface of the n-type semiconductor substrate in the cell region; an n-type buffer layer provided on a lower surface of the n-type semiconductor substrate; and a p-type layer provided on the lower surface of the n-type buffer layer in the termination region and deeper than the n-type buffer layer.