The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Jul. 12, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor substrate has a transistor region, a diode region, and an outer peripheral region. The transistor region is divided into a plurality of transistor unit cell regions by a plurality of gate electrodes each having a stripe shape, and the diode region is divided into a plurality of diode unit cell regions by the plurality of gate electrodes. Each of the plurality of transistor unit cell regions has a third semiconductor layer of a first conductivity type provided on a first main surface side of the semiconductor substrate, a fourth semiconductor layer of a second conductivity type selectively provided on an upper layer part of the third semiconductor layer, and a fifth semiconductor layer. The fifth semiconductor layer is provided to be in contact with an impurity layer of the first conductivity type provided in the outer peripheral region, or to enter the impurity layer.