The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Dec. 11, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Hidenori Fujii, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a technique for preventing a peak current during recovery while enhancing breakdown voltage. A semiconductor device includes the following: a p-type anode layer having a uniform p-type impurity concentration; an n-type layer having a distributed n-type impurity concentration; and an n-type layer disposed with the n-type layer interposed between the n-type layer and the p-type anode layer, the n-type layer having an n-type impurity concentration that is higher than that of the n-type layer and is uniform. The n-type impurity concentration of the n-type layer in a portion on the p-type-anode-layer side is lower than the p-type impurity concentration of the p-type anode layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile