The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Feb. 04, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/60 (2025.01); H10D 8/60 (2025.01); H10D 12/00 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/617 (2025.01); H10D 8/60 (2025.01); H10D 12/481 (2025.01); H10D 62/8303 (2025.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01);
Abstract
According to an aspect of the present disclosure, a semiconductor device includes a substrate including an IGBT region, and a diode region, a surface electrode provided on a top surface of the substrate and a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate, wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top surface of the substrate being recessed, and a second portion provided on one side of the first portion and thicker than the first portion.