The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Apr. 12, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT regionand a diode regionare provided adjacent to each other. The diode regionincludes a p-type anode layerprovided on a first principal surface side of an n-type drift layer, a p-type contact layerprovided on the first principal surface side of the p-type anode layerand at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode, and an n-type cathode layerprovided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layercontains aluminum as p-type impurities, and the thickness of the p-type contact layeris smaller than the thickness of an n-type source layerprovided in the IGBT region