Hidehiro Fujiwara

This inventor holds 145 USPTO granted patents and 70 published patent applications, primarily in Memory Devices (CPC class G11C11-419). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC Nanjing Company, Limited, TSMC China Company Limited. Active years: 2015-2026.

USPTO Granted Patents = 145 (Patent Applications = 70)

% Patents Active = 93.1

Average Co-Inventor Count = 4.2

ph-index = 6

Forward Citations = 194(Granted Patents)

Forward Citations (Not Self Cited) = 118(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hsinchu, CN (2021)
Hsin-Chu, TW (2015 - 2024)

Company Filing History:

144 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 111

TSMC Nanjing Company, Limited

patents

2 out of 130

TSMC China Company Limited

patents

4. 1 out of 450

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2015-2026

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Areas of Expertise:

In-Memory Computing

Integrated Circuit

Static RAM

Memory Devices

Bitcell

Voltage Regulator

3D Integrated Circuits

Power Consumption

Data Sequencing

Flexible Bank Addressing

Write Assist Circuit

Capacitance Reduction

145 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12743252 - Compute-in-memory cell (2026-09-22),

2. 12730610 - Integrated circuit with compute in-memory array and method of operating same (2026-09-08),

3. 12727142 - Method for forming a SRAM memory cell structure (2026-09-01),

4. 12718874 - Semiconductor devices and methods of manufacturing thereof (2026-08-25),

5. 12700454 - Fly shared bit line on 4-CPP static random access memory (SRAM) cell and array (2026-08-04),

6. 12658249 - Shared power footer circuit (2026-06-16),

7. 12610857 - In-memory computing circuit and fabrication method thereof (2026-04-21),

8. 12596494 - Integrated circuit and method of forming the same (2026-04-07),

9. 12587175 - Reduced power consumption compute-in-memory system, method of operating same (2026-03-24),

10. 12586635 - Static random access memory with write assist circuit (2026-03-24),

11. 12586628 - Adjusting pulse width based on address signal in memory devices (2026-03-24),

12. 12581635 - Integrated circuit device and method (2026-03-17),

13. 12542177 - Memory device and method for computing-in- memory (CIM) (2026-02-03),

14. 12541319 - Computing-in-memory device and method (2026-02-03),

15. 12531549 - Latch circuits and methods for operating the same (2026-01-20),

Title: The Innovative Journey of Hidehiro Fujiwara

Introduction: Hidehiro Fujiwara is a pioneering inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hidehiro Fujiwara holds several patents in the areas of semiconductor technology, nanotechnology, and renewable energy solutions. His recent patents focus on enhancing the efficiency and performance of electronic devices through novel design and materials.

Career Highlights: With a career spanning over two decades, Hidehiro Fujiwara has worked with leading tech companies and research institutions in Taiwan, driving innovation and pushing the boundaries of scientific discovery. His work has been instrumental in shaping the future of the semiconductor industry.

Collaborations: Throughout his career, Hidehiro Fujiwara has collaborated with top engineers, scientists, and researchers from around the world. His collaborative efforts have led to the development of cutting-edge technologies and solutions that have revolutionized the way we interact with electronic devices.

Conclusion: Hidehiro Fujiwara's relentless pursuit of innovation and his passion for pushing the limits of technology have established him as a visionary inventor in the field of semiconductor technology. His contributions continue to inspire the next generation of inventors and shape the future of technological advancements.