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For the Inventor, By the Inventor

Hidehiro Fujiwara

Hsinchu, Taiwan

Hidehiro Fujiwara

LinkedIn
USPTO Granted Patents = 127 

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 176(Granted Patents)

Forward Citations (Not Self Cited) = 118(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsinchu, CN (2021)
  • Hsin-Chu, TW (2015 - 2024)

Company Filing History:

goldMedal127 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 97 
 
TSMC Nanjing Company, Limited
 patents
bronzeMedal2 out of 114 
 
TSMC China Company Limited
 patents
where one patent can have more than one assignee

Years Active: 2015-2025

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Areas of Expertise:
Memory Devices
Semiconductor Technology
In-Memory Computation
Data Sequencing Circuits
Vertical Interconnect Structures
Static Random Access Memory
Three-Dimensional Integrated Circuits
Voltage Regulators
Bitcell Design
Memory Array Circuits
Compute-In-Memory
Negative Voltage Circuits
127 patents (USPTO):Explore Patents
1. 12494235 - Systems and methods for flexible bank addressing in digital computing-in-memory (DCIM) (2025-12-09),
2. 12475934 - Memory device and method for operating memory device (2025-11-18),
3. 12431192 - Semiconductor device (2025-09-30),
4. 12412621 - Semiconductor device including distributed write driving arrangement (2025-09-09),
5. 12408316 - Memory array circuit and method of manufacturing same (2025-09-02),
6. 12387768 - Memory device including separate negative bit line (2025-08-12),
7. 12380946 - Memory computation method (2025-08-05),
8. 12373131 - Data sequencing circuit and method (2025-07-29),
9. 12369292 - Memory device (2025-07-22),
10. 12367929 - Memory device having a negative voltage circuit (2025-07-22),
11. 12346143 - Voltage regulator with power rail tracking (2025-07-01),
12. 12334145 - Bitcell supporting bit-write-mask function (2025-06-17),
13. 12308303 - Integrated circuit die with memory macro including through-silicon via and method of forming the same (2025-05-20),
14. 12261152 - Vertical interconnect structures in three-dimensional integrated circuits (2025-03-25),
15. 12260904 - Memory device with additional write bit lines (2025-03-25),

Title: The Innovative Journey of Hidehiro Fujiwara

Introduction: Hidehiro Fujiwara is a pioneering inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hidehiro Fujiwara holds several patents in the areas of semiconductor technology, nanotechnology, and renewable energy solutions. His recent patents focus on enhancing the efficiency and performance of electronic devices through novel design and materials.

Career Highlights: With a career spanning over two decades, Hidehiro Fujiwara has worked with leading tech companies and research institutions in Taiwan, driving innovation and pushing the boundaries of scientific discovery. His work has been instrumental in shaping the future of the semiconductor industry.

Collaborations: Throughout his career, Hidehiro Fujiwara has collaborated with top engineers, scientists, and researchers from around the world. His collaborative efforts have led to the development of cutting-edge technologies and solutions that have revolutionized the way we interact with electronic devices.

Conclusion: Hidehiro Fujiwara's relentless pursuit of innovation and his passion for pushing the limits of technology have established him as a visionary inventor in the field of semiconductor technology. His contributions continue to inspire the next generation of inventors and shape the future of technological advancements.

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