Tainan, Taiwan

Heng-Yuan Lee

This inventor holds 22 USPTO granted patents and 5 published patent applications, primarily in Memory Technology. Top assignee: Industrial Technology Research Institute. Active years: 2008-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heng-Yuan Lee. Retrieved from https://idiyas.com/inventor/heng-yuan-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 77.3

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 597(Granted Patents)


Location History:

  • Madou Township, Tainan County, TW (2008)
  • Tainan County, TW (2008 - 2015)
  • Tainan, TW (2016)
  • Hsinchu, TW (2018)
  • Zhudong Township, Hsinchu County, TW (2014 - 2019)
  • Zhudong Township, TW (2012 - 2020)
  • Hsinchu County, TW (2012 - 2023)

Company Filing History:


Years Active: 2008-2023

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Areas of Expertise:
Neuron Circuit
Artificial Neural Network
Ferroelectric Memories
GaN-based Transistor
Epitaxial Wafer
III-nitride Semiconductor
Resistive Random Access Memory
Dynamic Random Access Memory
Capacitor Fabrication
Control Method
Resistance Switching Memory
Memory Cell
22 patents (USPTO):Explore Patents

Title: Heng-Yuan Lee: Innovator in Neural Technologies and Ferroelectric Memories

Introduction: Heng-Yuan Lee, based in Tainan County, Taiwan, is a prolific inventor known for his significant contributions to the fields of neural technologies and memory systems. With a remarkable portfolio of 22 patents, Lee has demonstrated his innovative prowess and continues to push the boundaries of technology.

Latest Patents: Among his latest innovations, two notable patents stand out. The first is the development of a neuron circuit and an artificial neural network chip, which incorporates a memristor and an integrator. The memristor is designed to generate a pulse train with oscillation frequencies triggered by voltage surges surpassing a predetermined threshold. The integrator, connected in parallel to the memristor, accumulates input pulses from preceding layers and facilitates the transmission of this pulse train to subsequent network layers. The second notable patent involves the creation of advanced ferroelectric memories. This memory system consists of a substrate, multi-layered conductive layers, and an innovative arrangement involving antiferroelectric and ferroelectric layers, designed to enhance memory efficiency and performance.

Career Highlights: Heng-Yuan Lee has established himself as a key figure at the Industrial Technology Research Institute, where he leverages his expertise in electronics and materials science. His extensive research and development work at this institute have resulted in various cutting-edge technologies that are paving the way for new advancements in artificial intelligence and memory solutions.

Collaborations: Throughout his career, Lee has collaborated with esteemed professionals in the field, including Yu-Sheng Chen and Po-Chun Yeh. These collaborations have played a significant role in his ability to innovate and drive forward the research agendas at the Industrial Technology Research Institute.

Conclusion: Heng-Yuan Lee's contributions to neural circuit design and ferroelectric memory technology exemplify the importance of innovation in modern electronics. With a strong foundation of patents and collaborative efforts, he continues to inspire future advancements in technology, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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