The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jun. 30, 2011
Frederick T. Chen, Zhubei, TW;
Heng-yuan Lee, Zhudong Township, Hsinchu County, TW;
Yu-sheng Chen, Taoyuan, TW;
Frederick T. Chen, Zhubei, TW;
Heng-Yuan Lee, Zhudong Township, Hsinchu County, TW;
Yu-Sheng Chen, Taoyuan, TW;
Industrial Technology Research Institute, Chutung, Hsinchu, TW;
Abstract
A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that decreases when a voltage applied thereto increases. The high-selection-ratio element has a first resistance that is small when a voltage applied to the memory cell is approximately equal to a selection voltage of the memory cell, and has a second resistance that is substantially larger than the first resistance when the voltage applied to the memory cell is approximately equal to one-half of the selection voltage.