The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Jun. 19, 2020
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Yu-De Lin, Taoyuan, TW;
Heng-Yuan Lee, Hsinchu County, TW;
Po-Chun Yeh, Taichung, TW;
Hsin-Yun Yang, Taichung, TW;
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/22 (2013.01);
Abstract
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of () or (), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of () or (), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of ().