Taoyuan, Taiwan

Yu-De Lin


Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Taoyuan County, TW (2016)
  • Taoyuan, TW (2020 - 2023)

Company Filing History:


Years Active: 2016-2023

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5 patents (USPTO):Explore Patents

Title: Yu-De Lin: Innovator in Ferroelectric Memory Technology

Introduction

Yu-De Lin is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of ferroelectric memory technology, holding a total of 5 patents. His work focuses on enhancing memory storage solutions through innovative designs and materials.

Latest Patents

Among his latest patents, Yu-De Lin has developed a ferroelectric memory that includes a first electrode, a second electrode opposite to the first electrode, and a ferroelectric composite layer situated between them. This composite layer consists of a first electrode layer, a second electrode layer, a ferroelectric layer, and an antiferroelectric layer. Another notable patent involves a ferroelectric memory that features a substrate, a first conductive layer, and a patterned oxide layer, which exposes part of the first conductive layer. This design aims to improve the efficiency and performance of memory devices.

Career Highlights

Yu-De Lin is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of memory technology. His innovative approaches have garnered attention in the research community and have the potential to impact various applications in electronics.

Collaborations

Yu-De Lin has collaborated with notable colleagues, including Po-Chun Yeh and Heng-Yuan Lee. Their combined expertise contributes to the advancement of research in ferroelectric materials and memory technologies.

Conclusion

Yu-De Lin's contributions to ferroelectric memory technology highlight his role as a leading inventor in the field. His innovative patents and collaborations reflect a commitment to advancing memory storage solutions.

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