Industrial Technology Research Institute

Yu-De Lin

Po-Chun Yeh

Heng-Yuan Lee

Hsin-Yun Yang

Chih-Yao Wang

Frederick Chen

Yu-Sheng Chen

Wei-Su Chen

Pei-Jer Tzeng

Tai-Yuan Wu

Pei-Yi Gu

A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.

Ferroeolectric memories with ferroelectric composite layer

A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

Ferroelectric memories

A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of () or (), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of () or (), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of ().

A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.

Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.

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Taoyuan, Taiwan

Yu-De Lin