The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jul. 06, 2021
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Yu-De Lin, Taoyuan, TW;

Po-Chun Yeh, Taichung, TW;

Pei-Jer Tzeng, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); G11C 11/22 (2013.01); H01L 2924/1441 (2013.01);
Abstract

A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.


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