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For the Inventor, By the Inventor

Hsinchu, Taiwan

Pei-Jer Tzeng

USPTO Granted Patents = 12

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 547(Granted Patents)


Location History:

  • Jhonghe, TW (2008)
  • Taipei County, TW (2008 - 2010)
  • Hsinchu, TW (2006 - 2016)
  • Zhubei, TW (2019 - 2021)
  • Hsinchu County, TW (2017 - 2023)

Company Filing History:

goldMedal12 out of 9,152 
 
Industrial Technology Research Institute
 patents

Years Active: 2006-2023

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12 patents (USPTO):Explore Patents
1. 11856789 - Ferroeolectric memories with ferroelectric composite layer (2023-12-26),
2. 10983087 - Structures and manufacture method of electrochemical units (2021-04-20),
3. 10908113 - Liquid-sensing apparatus and method of manufacturing the same (2021-02-02),
4. 10416114 - Structures and manufacture method of electrochemical units (2019-09-17),
5. 9721824 - Wafer bonding method and device with reduced thermal expansion (2017-08-01),
6. 9257338 - TSV substrate structure and the stacked assembly thereof (2016-02-09),
7. 7781298 - Methods for fabricating a capacitor (2010-08-24),
8. 7663177 - Non-volatile memory device and fabricating method thereof (2010-02-16),
9. 7507653 - Method of fabricating metal compound dots dielectric piece (2009-03-24),
10. 7405166 - Method of manufacturing charge storage device (2008-07-29),
11. 7405122 - Methods for fabricating a capacitor (2008-07-29),
12. 6991989 - Process of forming high-k gate dielectric layer for metal oxide semiconductor transistor (2006-01-31),

Title: Pei-Jer Tzeng: Innovator in Ferroelectric Memories and Electrochemical Units

Introduction

Pei-Jer Tzeng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology and electrochemical units. With a total of 12 patents to his name, Tzeng's work has advanced the understanding and application of ferroelectric materials.

Latest Patents

One of Tzeng's latest patents is focused on ferroelectric memories with a ferroelectric composite layer. This innovative memory design includes a first electrode, a second electrode opposite to the first, and a ferroelectric composite layer situated between them. The composite layer consists of a first electrode layer, a second electrode layer, a ferroelectric layer, and an antiferroelectric layer, enhancing the memory's performance and efficiency.

Another notable patent involves the structures and manufacturing methods of electrochemical units. This patent describes a structure that includes a substrate with a first metal layer and an array of electrochemical cells. Each cell is designed with a first electrode, a polymer layer, and a second metal layer, creating a unique configuration that improves the functionality of electrochemical systems.

Career Highlights

Pei-Jer Tzeng is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of technology. His work has not only contributed to academic knowledge but has also had practical implications in various industries.

Collaborations

Throughout his career, Tzeng has collaborated with notable colleagues, including Lurng-Shehng Lee and Cha-Hsin Lin. These partnerships have fostered innovation and have led to the development of groundbreaking technologies.

Conclusion

Pei-Jer Tzeng's contributions to the fields of ferroelectric memories and electrochemical units highlight his role as a leading inventor. His innovative patents and collaborations continue to shape the future of technology.

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