The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Jul. 11, 2006
Hengyuan Lee, Tainan County, TW;
Lurng-shehng Lee, Hsinchu County, TW;
Ching Chiun Wang, Miaoli County, TW;
Pei-jer Tzeng, Taipei County, TW;
Hengyuan Lee, Tainan County, TW;
Lurng-Shehng Lee, Hsinchu County, TW;
Ching Chiun Wang, Miaoli County, TW;
Pei-Jer Tzeng, Taipei County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mask layer is patterned to form a patterned second mask layer in a predetermined region for formation of a capacitor. A plurality of hemispherical grain structures are formed on a sidewall of the patterned second mask layer. The first mask layer is etched by using the hemispherical grain structures and the patterned second mask layer as a mask, thereby forming a patterned first mask layer having a pattern. The pattern of the first mask layer is transferred to the bottom electrode material layer. And, a capacitor dielectric layer and a top electrode layer are formed on the bottom electrode material layer to form the capacitor.