Lurng-Shehng Lee

Title: The Innovative Contributions of Lurng-Shehng Lee in Silicon Carbide Semiconductor Technology

Introduction: Lurng-Shehng Lee, based in Hsinchu County, Taiwan, is a renowned inventor with a remarkable portfolio of 19 patents. His work primarily focuses on advancements in silicon carbide (SiC) semiconductor devices, which are pivotal for various high-performance electronic applications.

Latest Patents: Among his most recent innovations is the patent for a silicon carbide semiconductor device and its manufacturing method. This invention outlines a novel approach to creating a semiconductor component structure on a silicon carbide substrate. The method emphasizes the formation of a multi-layer structure on the substrate's backside, consisting of several ohmic contact layers and gettering material layers. This innovative strategy allows for effective carbon gettering despite the thinness of the gettering material layer, significantly enhancing the performance and reliability of semiconductor devices.

In addition, another noteworthy invention by Lee involves a silicon carbide semiconductor device that integrates a metal oxide semiconductor field-effect transistor (MOSFET) with an anti-parallelly connected Schottky diode. The design showcases an n-type substrate and drift layer, along with various doped regions and metal layers, ensuring optimal function in high-voltage and high-temperature conditions.

Career Highlights: Lurng-Shehng Lee has played vital roles in several organizations, including the Industrial Technology Research Institute and Hestia Power Inc. His work in these esteemed institutions has contributed significantly to the field of semiconductor technology, particularly in silicon carbide innovations.

Collaborations: Throughout his career, Lee has collaborated with talented individuals such as Cha-Hsin Lin and Chwan-Ying Lee. These partnerships have facilitated groundbreaking research and development in semiconductor technology, further advancing the industry's capability.

Conclusion: Lurng-Shehng Lee's contributions to the field of silicon carbide semiconductor devices and manufacturing methods are integral to the ongoing evolution of electronics. With a solid foundation built on innovative patents and cooperative efforts, Lee continues to lead in semiconductor advancements that support various industrial applications.