The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Oct. 12, 2005
Applicants:
Cha-hsin Lin, Hsinchu, TW;
Lurng-shehng Lee, Hsinchu, TW;
Pei-jer Tzeng, Hsinchu, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A non-volatile memory device and fabricating method thereof are provided. In the deposition to form a tunneling dielectric layer, a composite charge trapping layer and a block dielectric layer, an ingredient of a depositing material or the depositing material is adjusted to form a grading energy level structure, such that carriers are trapped or erased more easily in accordance with a variation in grading energy level. Therefore, the carriers are stored more effectively and the probability that the electric leakage occurs is reduced substantially.