The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2023
Filed:
Aug. 31, 2021
Hestia Power Shanghai Technology Inc., Shanghai, CN;
HESTIA POWER SHANGHAI TECHNOLOGY INC., Shanghai, CN;
Abstract
A silicon carbide (carborundum) semiconductor device and a manufacturing method thereof. The manufacturing method of the silicon carbide semiconductor device comprises the following steps of: providing a semiconductor component structure on a silicon carbide substrate, the semiconductor component structure being formed on a front side of the silicon carbide substrate; and forming a multi-layer structure on a back side of the silicon carbide substrate, the multi-layer structure comprising a plurality of ohmic contact layers and a plurality of gettering material layers. By dispersing the gettering material into multiple layers, and by adjusting a thickness combination of the ohmic contact layer and the gettering material layer, even if the gettering material layer is relatively thin (thickness sufficient for balling), a content is still sufficient for gettering carbon and reducing carbon aggregation and accumulation.