The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Oct. 08, 2008
Heng-yuan Lee, Tainan County, TW;
Chieh-shuo Liang, Kaohsiung, TW;
Lurng-shehng Lee, Hsinchu County, TW;
Heng-Yuan Lee, Tainan County, TW;
Chieh-Shuo Liang, Kaohsiung, TW;
Lurng-Shehng Lee, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A structure of a DRAM cylindrical capacitor includes a substrate, a dielectric layer, an amorphous silicon spacer, a polysilicon plug, a HSG layer, a conductive layer and a capacitor dielectric layer. The dielectric layer is disposed on the substrate and includes an opening. The amorphous silicon spacer is disposed on the sidewall of the opening, wherein the polysilicon plug is exposed by the opening. The polysilicon plug includes a notch, and the internal surface of the notch is at the same plane as the internal surface of the amorphous silicon spacer. The HSG layer is disposed on the surface of the amorphous silicon spacer. Furthermore, the conductive layer is disposed on the HSG layer and the capacitor dielectric layer is disposed between the HSG layer and the conductive layer.