Tainan County, Taiwan

Hengyuan Lee


Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 26(Granted Patents)


Location History:

  • Tainan County, TW (2008 - 2010)
  • Tainan, TW (2013)

Company Filing History:


Years Active: 2008-2013

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4 patents (USPTO):Explore Patents

Title: Innovations by Hengyuan Lee in Resistive Random Access Memory

Introduction

Hengyuan Lee is a notable inventor based in Tainan County, Taiwan. He has made significant contributions to the field of memory technology, particularly in resistive random access memory (ReRAM). With a total of 4 patents to his name, Lee's work is recognized for its innovative approaches and practical applications.

Latest Patents

One of Hengyuan Lee's latest patents is titled "Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same." This invention provides a method for fabricating a resistive random access memory that includes a bottom electrode formed on a substrate, a metal oxide layer, and an oxygen atom gettering layer. The process involves a thermal treatment that drives oxygen atoms to migrate, creating oxygen vacancies in the metal oxide layer.

Another significant patent by Lee is related to "Methods for fabricating a capacitor." This method outlines the steps for forming a capacitor, including the formation of a bottom electrode material layer, the use of mask layers, and the creation of hemispherical grain structures. The process culminates in the formation of a capacitor dielectric layer and a top electrode layer.

Career Highlights

Hengyuan Lee is affiliated with the Industrial Technology Research Institute, where he continues to advance research in memory technologies. His work has been instrumental in developing new methods and materials that enhance the performance and efficiency of electronic devices.

Collaborations

Lee has collaborated with esteemed colleagues such as Lurng-Shehng Lee and Ching Chiun Wang. These collaborations have fostered a productive research environment, leading to innovative solutions in the field of memory technology.

Conclusion

Hengyuan Lee's contributions to resistive random access memory and capacitor fabrication highlight his role as a leading inventor in the technology sector. His patents reflect a commitment to innovation and excellence in research, paving the way for advancements in electronic memory solutions.

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