The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Dec. 12, 2008
Applicants:

Hengyuan Lee, Tainan, TW;

Pang-hsu Chen, Hsinchu, TW;

Tai-yuan Wu, Taipei, TW;

Ching-chiun Wang, Miaoli, TW;

Inventors:

Hengyuan Lee, Tainan, TW;

Pang-Hsu Chen, Hsinchu, TW;

Tai-Yuan Wu, Taipei, TW;

Ching-Chiun Wang, Miaoli, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resistive random access memory and a method for fabricating the same are provided. The method includes providing a bottom electrode formed on a substrate. A metal oxide layer is formed on the bottom electrode. An oxygen atom gettering layer is formed on the metal oxide layer. A top electrode is formed on the oxygen atom gettering layer. The previous mentioned structure is subjected to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, thus leaving a plurality of oxygen vacancies of the metal oxide layer.


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Lee, Hengyuan. (2013). Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same (U.S. Patent No. 8362454). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8362454

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