The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Apr. 19, 2006
Chieh-shuo Liang, Kaohsiung, TW;
Pei-jer Tzeng, Jhonghe, TW;
Heng-yuan Lee, Madou Township, Tainan County, TW;
Lurng-shehng Lee, Chiudon Township, Hsinchu County, TW;
Chieh-Shuo Liang, Kaohsiung, TW;
Pei-Jer Tzeng, Jhonghe, TW;
Heng-Yuan Lee, Madou Township, Tainan County, TW;
Lurng-Shehng Lee, Chiudon Township, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of manufacturing a charge storage device is provided. Utilizing the capacity for a precise control of the thickness and the silicon content of a deposited film in an atomic layer deposition process, a stacked gradual material layer such as a hafnium silicon oxide (HfSiO) layer is formed. The silicon content is gradually changed throughout the duration of the HfSiOdeposition process. The etching rate for the HfSiOlayer in dilute hydrogen fluoride solution is dependent on the silicon content y in the HfSiOlayer. The sidewalls of the stacked gradual material layer are etched to form an uneven profile. The lower electrode, the capacitor dielectric layer and the upper electrode are formed on the uneven sidewalls of the stacked gradual material layers, the area between the lower electrode and the upper electrode is increased to improve the capacitance of the charge storage device.