The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Dec. 08, 2021
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Shang-Chun Chen, Hsinchu City, TW;

PO-Chun Yeh, Taichung City, TW;

Pei-Jer Tzeng, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/66 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76816 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 23/66 (2013.01); H01L 2223/6616 (2013.01); H10D 30/015 (2025.01); H10D 30/4755 (2025.01);
Abstract

A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.


Find Patent Forward Citations

Loading…