The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Feb. 08, 2019
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Yu-De Lin, Taoyuan, TW;
Heng-Yuan Lee, Zhudong Township, TW;
Po-Chun Yeh, Taichung, TW;
Chih-Yao Wang, Taichung, TW;
Hsin-Yun Yang, Taichung, TW;
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11507 (2017.01); G11C 11/22 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); G11C 11/221 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01);
Abstract
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.