Company Filing History:
Years Active: 2020-2022
Title: Hsin-Yun Yang: Innovator in Ferroelectric Memory Technology
Introduction
Hsin-Yun Yang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of ferroelectric memory technology, holding a total of 3 patents. His work is recognized for its innovative approaches to memory storage solutions.
Latest Patents
Hsin-Yun Yang's latest patents focus on advancements in ferroelectric memories. One of his patents describes a ferroelectric memory that includes a substrate, a first conductive layer, a patterned oxide layer, a second conductive layer, an antiferroelectric layer, a ferroelectric layer, a conductive oxide layer, and a third conductive layer. This design aims to enhance the efficiency and performance of memory devices. Another patent outlines a ferroelectric memory that features a first electrode layer and a second electrode layer, with a ferroelectric layer positioned between them. This configuration is designed to optimize the crystallographic orientation of the materials used, further improving memory functionality.
Career Highlights
Hsin-Yun Yang is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of memory technology. His work has garnered attention for its potential applications in various electronic devices, making him a key figure in the field.
Collaborations
Hsin-Yun Yang has collaborated with notable colleagues, including Yu-De Lin and Heng-Yuan Lee. Their combined expertise contributes to the innovative projects undertaken at the Industrial Technology Research Institute.
Conclusion
Hsin-Yun Yang's contributions to ferroelectric memory technology highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing memory solutions, showcasing the potential for future developments in electronic storage.