The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Dec. 28, 2011
Frederick T. Chen, Hsinchu County, TW;
Heng-yuan Lee, Hsinchu County, TW;
Yu-sheng Chen, Taoyuan County, TW;
Frederick T. Chen, Hsinchu County, TW;
Heng-Yuan Lee, Hsinchu County, TW;
Yu-Sheng Chen, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A resistive random access memory (RRAM) cell including a first electrode, a second electrode, and a plurality of repeated sets of layers is provided. Each of the sets of layers includes a resistance-changing layer, a barrier layer, and an ionic exchange layer between the resistance-changing layer and the barrier layer, wherein a thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness each of the resistance-changing layer and ionic exchange layer are less than an electron mean free path. Further, a RRAM module including the aforesaid RRAM cell and a switch is also provided.