The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Oct. 23, 2017
Industrial Technology Research Institute, Hsinchu, TW;
Kan-Hsueh Tsai, Lukang Township, Changhua County, TW;
Heng-Yuan Lee, Zhudong Township, Hsinchu County, TW;
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Chutung, Hsinchu, TW;
Abstract
A GaN-based transistor device comprises a substrate; a buffer layer disposed on the substrate; a channel layer disposed on the buffer layer; a barrier layer disposed on a part of the channel layer; a passivation layer disposed on the barrier layer; wherein the barrier layer and the passivation layer comprise a first side wall and a second side wall; a barrier metal layer disposed on the passivation layer has a first opening that exposes a part of the passivation layer, and the passivation layer has a second opening located in the first opening; a gate electrode disposed on the exposed part of the barrier layer, a source electrode disposed on the channel layer covers the first side wall and a part of the barrier metal layer, and a drain electrode disposed on the channel layer covers the second side wall and another part of the barrier metal layer.