Kan-Hsueh Tsai

Title: Kan-Hsueh Tsai: Innovator in GaN-based Transistor Technology

Introduction

Kan-Hsueh Tsai is a prominent inventor based in Lukang, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of GaN-based transistors. With a total of 2 patents to his name, Tsai's work is recognized for its innovative approaches and practical applications.

Latest Patents

Tsai's latest patents include the "Structure of GaN-based transistor and method of fabricating the same." This invention describes a GaN-based transistor device that features a substrate, a buffer layer, a channel layer, a barrier layer, and a passivation layer. The design includes specific configurations for the barrier and passivation layers, as well as the arrangement of gate, source, and drain electrodes.

Another notable patent is the "Structure of epitaxial wafer and method of fabricating the same." This patent outlines an epitaxial wafer that consists of a silicon wafer with a central area and an extremity area that has a stepped profile. The nitride epitaxial layer formed on the silicon wafer is designed with precise dimensions, enhancing its functionality in various applications.

Career Highlights

Kan-Hsueh Tsai is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing technologies that are critical for modern electronic devices.

Collaborations

Tsai has collaborated with notable colleagues, including Heng-Yuan Lee and Po-Chun Yeh. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor industry.

Conclusion

Kan-Hsueh Tsai's contributions to GaN-based transistor technology and epitaxial wafer fabrication highlight his role as a leading inventor in the field. His patents reflect a commitment to innovation and excellence in semiconductor research.