Industrial Technology Research Institute

Kan-Hsueh Tsai

Heng-Yuan Lee

Po-Chun Yeh

Yi-Keng Fu

Hsueh-Hsing Liu

Chuan-Wei Tsou

Han-Chieh Ho

A GaN-based transistor device comprises a substrate; a buffer layer disposed on the substrate; a channel layer disposed on the buffer layer; a barrier layer disposed on a part of the channel layer; a passivation layer disposed on the barrier layer; wherein the barrier layer and the passivation layer comprise a first side wall and a second side wall; a barrier metal layer disposed on the passivation layer has a first opening that exposes a part of the passivation layer, and the passivation layer has a second opening located in the first opening; a gate electrode disposed on the exposed part of the barrier layer, a source electrode disposed on the channel layer covers the first side wall and a part of the barrier metal layer, and a drain electrode disposed on the channel layer covers the second side wall and another part of the barrier metal layer.

Structure of GaN-based transistor and method of fabricating the same

This disclosure provides an epitaxial wafer, which includes: a silicon wafer having a central area and an extremity area enclosing the central area, the extremity area having a stepped profile; and an nitride epitaxial layer formed on the silicon wafer; wherein, the stepped profile has a width between 10 and 1500 &#x3bc;m and a height between 1 and 500 &#x3bc;m.

Structure of epitaxial wafer and method of fabricating the same

Growing community of inventors

Lukang, Taiwan

Kan-Hsueh Tsai