The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Dec. 29, 2011
Heng-yuan Lee, Hsinchu County, TW;
Yu-sheng Chen, Taoyuan County, TW;
Heng-Yuan Lee, Hsinchu County, TW;
Yu-Sheng Chen, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A resistive memory including a transistor and a variable resistor is disclosed. The transistor includes a gate, a source and a drain. The variable resistor is coupled between the drain and a node. During a setting period, the gate receives a first gate voltage, the source receives a first source voltage, the node receives a first drain voltage, and the first source voltage is equal to a grounding voltage. After the setting period, if a resistance value of the variable resistor is not less than a first pre-determined value, a first verification operation is performed. When the first verification operation is being performed, the gate receives a second gate voltage, the node receives a second drain voltage less than the first drain voltage, and the source receives a second source voltage equal to the grounding voltage.