The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jun. 05, 2012
Yu-sheng Chen, Taoyuan, TW;
Heng-yuan Lee, Zhudong Township, TW;
Yen-ya Hsu, Taipei, TW;
Pang-shiu Chen, Hsinchu, TW;
Ching-chih Hsu, Xinpu Township, TW;
Frederick T. Chen, Zhubei, TW;
Yu-Sheng Chen, Taoyuan, TW;
Heng-Yuan Lee, Zhudong Township, TW;
Yen-Ya Hsu, Taipei, TW;
Pang-Shiu Chen, Hsinchu, TW;
Ching-Chih Hsu, Xinpu Township, TW;
Frederick T. Chen, Zhubei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A control method for at least one memory cell is disclosed. The memory cell includes a transistor and a resistor. The resistor is connected to the transistor in series between a first node and a second node. In a programming mode, the memory cell is programmed. When it is determined that the memory cell has been successfully programmed, impedance of the memory cell is in a first state. When it is determined that the memory cell has not been successfully programmed, a specific action is executed to reset the memory cell. The impedance of the memory cell is in a second state after the step resetting the memory cell. The impedance of the memory cell in the second state is higher than that of the memory cell in the first state.