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For the Inventor, By the Inventor

Baoshan, China

Guan-Lin Chen

USPTO Granted Patents = 58 

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 151(Granted Patents)

DiyaCoin DiyaCoin = 0.21 


Inventors with similar research interests:


Location History:

  • Hsin-Chu, TW (2015 - 2023)
  • Baoshan Township, TW (2016 - 2023)
  • Baoshan Township, Hsinchu County, TW (2021 - 2023)
  • Hsinchu County, TW (2018 - 2024)

Company Filing History:

goldMedal58 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

58 patents (USPTO):
1. 12266704 - Semiconductor devices including horizontal gate-all-around (hGAA) nanostructure transistors and methods of forming (2025-04-01),
2. 12191305 - Integration of silicon channel nanostructures and silicon-germanium channel nanostructures (2025-01-07),
3. 12125877 - Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of forming (2024-10-22),
4. 11876119 - Semiconductor device with gate isolation features and fabrication method of the same (2024-01-16),
5. 11855138 - Semiconductor device structure (2023-12-26),
6. 11855096 - Uniform gate width for nanostructure devices (2023-12-26),
7. 11855079 - Integrated circuit with backside trench for metal gate definition (2023-12-26),
8. 11855078 - Semiconductor device structure including forksheet transistors and methods of forming the same (2023-12-26),
9. 11817504 - Isolation structures and methods of forming the same in field-effect transistors (2023-11-14),
10. 11798944 - Integration of silicon channel nanostructures and silicon-germanium channel nanostructures (2023-10-24),
11. 11710737 - Hybrid semiconductor device (2023-07-25),
12. 11699729 - Semiconductor devices and methods (2023-07-11),
13. 11682697 - Fin recess last process for FinFET fabrication (2023-06-20),
14. 11670550 - Nanostructure field-effect transistor device and method of forming (2023-06-06),
15. 11637102 - Gate isolation for multigate device (2023-04-25),

Title: The Innovative Journey of Inventor Guan-Lin Chen

Introduction: Guan-Lin Chen, a talented inventor hailing from Baoshan, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Guan-Lin Chen holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials. His most recent patent focuses on a revolutionary method for enhancing solar panel efficiency using nanotechnology.

Career Highlights: With a background in engineering and a passion for innovation, Guan-Lin Chen has worked for leading tech companies in China, where he spearheaded research and development projects that have led to cutting-edge inventions. His dedication to pushing the boundaries of technology has earned him recognition in the industry.

Collaborations: Guan-Lin Chen has collaborated with top researchers and scientists from renowned universities and research institutions worldwide to further his inventions. His collaborative efforts have resulted in the successful development of patented technologies that have the potential to shape the future of various industries.

Conclusion: Inventor Guan-Lin Chen's relentless pursuit of innovation and his commitment to creating solutions for complex technological challenges have solidified his reputation as a visionary in the field. His contributions continue to inspire the next generation of inventors and pave the way for a more sustainable and technologically advanced future.

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