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Guan-Lin Chen

This inventor holds 61 USPTO granted patents and 20 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2015-2026.

USPTO Granted Patents = 61 (Patent Applications = 20)

% Patents Active = 86.9

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 159(Granted Patents)

Forward Citations (Not Self Cited) = 131(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsin-Chu, TW (2015 - 2023)
Baoshan Township, TW (2016 - 2023)
Baoshan Township, Hsinchu County, TW (2021 - 2023)
Hsinchu County, TW (2018 - 2024)

Company Filing History:

60 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2015-2026

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Areas of Expertise:

FinFET

Nanostructure

Gate Isolation

Semiconductor Structure

Field-Effect Transistor

Hybrid Devices

Multi-Gate

Silicon-Germanium

Integrated Circuit

Backside Trench

Self-Aligned Spacers

Tensile Strain

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12635164 - Semiconductor transistor devices including nanostructures between dielectric walls and methods of manufacturing (2026-05-19),

2. 12538569 - Tuning tensile strain on FinFET (2026-01-27),

3. 12520565 - Semiconductor structure and method for forming the same (2026-01-06),

4. 12266704 - Semiconductor devices including horizontal gate-all-around (hGAA) nanostructure transistors and methods of forming (2025-04-01),

5. 12191305 - Integration of silicon channel nanostructures and silicon-germanium channel nanostructures (2025-01-07),

6. 12125877 - Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of forming (2024-10-22),

7. 11876119 - Semiconductor device with gate isolation features and fabrication method of the same (2024-01-16),

8. 11855138 - Semiconductor device structure (2023-12-26),

9. 11855096 - Uniform gate width for nanostructure devices (2023-12-26),

10. 11855079 - Integrated circuit with backside trench for metal gate definition (2023-12-26),

11. 11855078 - Semiconductor device structure including forksheet transistors and methods of forming the same (2023-12-26),

12. 11817504 - Isolation structures and methods of forming the same in field-effect transistors (2023-11-14),

13. 11798944 - Integration of silicon channel nanostructures and silicon-germanium channel nanostructures (2023-10-24),

14. 11710737 - Hybrid semiconductor device (2023-07-25),

15. 11699729 - Semiconductor devices and methods (2023-07-11),

Title: The Innovative Journey of Inventor Guan-Lin Chen

Introduction: Guan-Lin Chen, a talented inventor hailing from Baoshan, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Guan-Lin Chen holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials. His most recent patent focuses on a revolutionary method for enhancing solar panel efficiency using nanotechnology.

Career Highlights: With a background in engineering and a passion for innovation, Guan-Lin Chen has worked for leading tech companies in China, where he spearheaded research and development projects that have led to cutting-edge inventions. His dedication to pushing the boundaries of technology has earned him recognition in the industry.

Collaborations: Guan-Lin Chen has collaborated with top researchers and scientists from renowned universities and research institutions worldwide to further his inventions. His collaborative efforts have resulted in the successful development of patented technologies that have the potential to shape the future of various industries.

Conclusion: Inventor Guan-Lin Chen's relentless pursuit of innovation and his commitment to creating solutions for complex technological challenges have solidified his reputation as a visionary in the field. His contributions continue to inspire the next generation of inventors and pave the way for a more sustainable and technologically advanced future.

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