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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11855079 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Sep. 24, 2021

Integrated circuit with backside trench for metal gate definition

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuo-Cheng Chiang, Hsinchu, TW;

Jung-Chien Cheng, Hsinchu, TW;

Shi-Ning Ju, Hsinchu, TW;

Guan-Lin Chen, Hsinchu, TW;

Chih-Hao Wang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/4232 (2013.01); H01L 29/66477 (2013.01);
Abstract

An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The first and second nanosheet each include gate electrodes. A gate isolation structure extends from a backside of the substrate between the gate electrodes. The gate isolation structure physically and electrically isolates the first and second gate electrodes from each other.

Find Patent Forward Citations

Chiang, Kuo-Cheng. (2023). Integrated circuit with backside trench for metal gate definition (U.S. Patent No. 11855079). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11855079

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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