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For the Inventor, By the Inventor

Hsinchu, Taiwan

Jung-Chien Cheng

This inventor holds 30 USPTO granted patents and 41 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-Chien Cheng. Retrieved from https://idiyas.com/inventor/jung-chien-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 100.0

Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 16(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Tainan, TW (2022 - 2024)

Company Filing History:

goldMedal27 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal3 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2022-2026

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Areas of Expertise:
Field Effect Transistor
Gate Isolation
Nanostructures
Hybrid Structures
Vertical Device
Integrated Circuit
Transistor Devices
Nanosheet Devices
Forksheet Transistors
Thermal Management
Dielectric Features
Substrate Leakage
30 patents (USPTO):Explore Patents
1. 12690215 - Field effect transistor with gate isolation structure and method (2026-07-21),
2. 12684813 - Vertical gate-all-around device (2026-07-14),
3. 12635164 - Semiconductor transistor devices including nanostructures between dielectric walls and methods of manufacturing (2026-05-19),
4. 12598787 - Field effect transistor with dual layer isolation structure and method (2026-04-07),
5. 12464812 - Semiconductor device structure including forksheet transistors and methods of forming the same (2025-11-04),
6. 12464750 - Semiconductor device and formation method thereof (2025-11-04),
7. 12402407 - Gap-insulated semiconductor device (2025-08-26),
8. 12389643 - Semiconductor device structure (2025-08-12),
9. 12376365 - Nanosheet devices with hybrid structures and methods of fabricating the same (2025-07-29),
10. 12324229 - Semiconductor device structure including forksheet transistors and methods of forming the same (2025-06-03),
11. 12302630 - Integrated circuit with backside trench for metal gate definition (2025-05-13),
12. 12300723 - Transistor including downward extending silicide (2025-05-13),
13. 12300719 - Structure and formation method of semiconductor device with isolation structure (2025-05-13),
14. 12249621 - Semiconductor structure with dielectric fin feature (2025-03-11),
15. 12183799 - Semiconductor device with gate isolation features and fabrication method of the same (2024-12-31),

Title: Jung-Chien Cheng: Innovator from Hsinchu

Introduction: Jung-Chien Cheng is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jung-Chien Cheng holds several patents in the areas of semiconductor technology, renewable energy, and advanced materials. His most recent patents focus on enhancing the efficiency of solar cells and improving the performance of semiconductor devices.

Career Highlights: With a background in electrical engineering, Jung-Chien Cheng has had a distinguished career working in both academia and industry. He has held key research positions in leading technology companies and research institutions, where he has spearheaded projects that have led to significant advancements in the field.

Collaborations: Jung-Chien Cheng has collaborated with top researchers, engineers, and scientists from around the world to push the boundaries of innovation. His collaborative efforts have resulted in the development of cutting-edge technologies that have the potential to revolutionize various industries.

Conclusion: Jung-Chien Cheng's relentless pursuit of innovation and his passion for pushing the limits of technology have established him as a prominent figure in the world of inventors. His work continues to inspire the next generation of innovators and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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