The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Apr. 12, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Guan-Lin Chen, Hsinchu County, TW;
Jung-Chien Cheng, Tainan City, TW;
Shi-Ning Ju, Hsinchu City, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes first nanostructures formed over a substrate, and a first gate electrode layer formed on the first nanostructures. The semiconductor structure includes a second gate electrode layer adjacent to the first gate electrode layer, and a protective layer formed over the first gate electrode layer and the second gate electrode layer. The semiconductor structure includes a first dielectric structure between the first gate electrode layer and the second gate electrode layer, and the first dielectric structure penetrates through the protective layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile