The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Nov. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jung-Chien Cheng, Tainan, TW;

Kuo-Cheng Chiang, Hsinchu County, TW;

Shi Ning Ju, Hsinchu, TW;

Guan-Lin Chen, Hsinchu County, TW;

Chih-Hao Wang, Hsinchu County, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/082 (2006.01); H01L 27/102 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 30/6219 (2025.01);
Abstract

Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.


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