The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kuo-Cheng Chiang, Hsinchu, TW;
Jung-Chien Cheng, Hsinchu, TW;
Shi-Ning Ju, Hsinchu, TW;
Guan-Lin Chen, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/76224 (2013.01); H10D 30/021 (2025.01); H10D 62/115 (2025.01); H10D 62/121 (2025.01); H10D 64/511 (2025.01);
Abstract
An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The first and second nanosheet each include gate electrodes. A gate isolation structure extends from a backside of the substrate between the gate electrodes. The gate isolation structure physically and electrically isolates the first and second gate electrodes from each other.